Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes

L. Redaelli1, H. Wenzel1, T. Weig2, G. Lükens2, S. Einfeldt1, U.T. Schwarz2, M. Kneissl1,3, G. Tränkle1

Published in:

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, Jun. 9-14, p. CF1F.3 (2013).

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The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, 79108 Freiburg, Germany
3 Institute for Solid State Physics, Technical University Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

OCIS codes:

(140.2020) Diode Lasers; (140.7300) Visible Lasers