Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm

M. Maiwald, A. Klehr, B. Sumpf, G. Erbert, and G. Tränkle

Published in:

IEEE Photonics Technol. Lett., vol. 26, no. 11, pp. 1120-1123 (2014).

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A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector Y-branch diode laser as a dual-wavelength MO and a ridge waveguide PA. The system reaches an optical output power of more than 750 mW at 25 °C. Optical spectra show wavelength stabilized single mode emission at 784.60 and 785.22 nm over the whole power range with a spectral width ≤10 pm (≤0.5 cm-1) and a spectral distance of 0.62 nm (≤10.1 cm-1).

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Index Terms:

Diode lasers, semiconductor lasers, DBR, Y-branch, Raman spectroscopy, shifted excitation Raman difference spectroscopy, SERDS, 785 nm.