Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

J. Böcker1, K. Tetzner2, S. Heucke1, O. Hilt2, E. Bahat-Treidel2, S. Dieckerhoff1 and J. Würfl2

Published in:

Electron. Lett., vol. 56, no. 16, pp. 838-840 (2020).

Copyright © The Institution of Engineering and Technology 2020. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from IET.

Abstract:

Static characterisation and fast switching processes of lateral β-Ga2O3 metal oxide semiconductor field-effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm gate width and 6 µm gate drain distance achieve on-state resistances of 5 Ω and saturation currents above 2.4 A. Hard switching in a double pulse test setup with an inductive load results in voltage slopes up to 65 V/ns at 300 V input voltage. After longer blocking times and higher DC voltages, a strong dynamic increase in on-state resistance occurs. Switching with an ohmic load and different load currents reveals only minor influence of the hot electron mechanism during the hard turn on. However, a clear influence of the turn-on gate drive voltage on the dynamic increase is observed, indicating a shift of the transfer characteristic due to charge trapping in the gate region.

1 Technische Universität Berlin, Power Electronics Group, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Keywords:

ohmic contacts, MOSFET, contact resistance, gallium compounds