Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy

I. Levine1, I. Gamov2, M. Rusu3, K. Irmscher2, C. Merschjann4, E. Richter5, M. Weyers5, and Th. Dittrich1

Published in:

Phys. Rev. B, vol. 101, no. 24, pp. 245205 (2020).

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A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals by investigating the light-induced change of the contact potential difference with a Kelvin probe as a function of the carbon concentration in the crystal. Bulk polarization was caused by excitation of defects setting in at photon energies of 0.95-1.05 eV (C1) and 2.5-2.6 eV (C3). From the dependence on the carbon concentration, C1 can be assigned to isolated carbon defects and C3 to tricarbon defects.

1 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Kekuléstrasse 5, Germany
2 Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Max-Born-Strasse 2, Germany
3 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Abteilung Struktur und Dynamik von Energiematerialien, 14109 Berlin, Hahn-Meitner-Platz 1, Germany
4 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Angewandte Materialforschung, 14109 Berlin, Hahn-Meitner-Platz 1, Germany
5 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Gustav-Kirchhoff-Strasse 4, Germany