Broadband Driver Amplifier with Voltage Offset for GaN-based Switching PAs
IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 273-276 (2020).
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The paper presents a GaN-based driver amplifier (PSA) module with potential shifting included, suitable for properly driving GaN-HEMTs with digital bit sequences in the microwave range. The PSA is capable of driving a GaN-HEMT with 5 Vpp input swing from a standard 1 Vpp signal. Additionally, it provides a controllable potential shift (DC-offset) between -1.9 V to -10.9 V when referenced to GND. A voltage gain of 10.7 and 4.9 with a load of 1 kΩ || 0.25 pF and 50 Ω is achieved, respectively. Input of the PSA is referred to GND with 50 Ω input impedance. The bandwidth is DC - 3.2 GHz for a 3 dB voltage gain drop for both loads applied. The proposed PSA is an important part to complete digital signal chains and can be also used as analog amplifier.
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
microwave amplifiers, drivers, switch-mode, digital, power amplifiers, potential shift, GaN, MMIC.