Basic Aspects of High-Power Semiconductor Laser Simulation

H. Wenzel

Published in:

IEEE J. Sel. Top. Quantum Electron., vol. 19, no. 5, pp. 1502913 (2013).

© Copyright 2013 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.


The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the investigation of modal instabilities and filamentation effects are presented and the impact of the thermallensing effect on the spatiotemporal behavior of the optical field is demonstrated.We reveal the factors that limit the output power at very high injection currents based on a numerical solution of the thermodynamic based drift-diffusion equations and elucidate the role of longitudinal spatial hole burning.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Index Terms:

Diode lasers, laser modes, laser theory, numerical simulation, semiconductor device modeling, semiconductor lasers.