Assessment of the Limits to Peak Power of 1100nm Broad Area Single Emitter Diode Lasers under Short Pulse Conditions

X. Wang, P. Crump, A. Pietrzak, C. Schultz, A. Klehr, T. Hoffmann, A. Liero, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert and G. Tränkle

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Int. Nano-Optoelectronic Workshop (iNOW 2009), Stockholm, Sweden, Berlin, Germany, Aug. 2-15 (2009).

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We present the results of a study using commercial high current short pulse sources (>200A, <500ns) to assess the performance and endurance limits of high power broad area devices.

1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany