Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers

J. Rieprich1, M. Winterfeldt1, J. Tomm2, R. Kernke2, P. Crump1

Published in:

Proc. SPIE 10085, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1008502 (2017).

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The lateral beam parameter product, BPPlat, and resulting lateral brightness of GaAs-based high-power broad-area diode lasers is strongly influenced by the thermal lens profile. We present latest progress in efforts using FEM simulation to interpret how variation in chip construction influences the thermal lens profile, itself determined experimentally using thermography (thermal camera). Important factors are shown to include the vertical (epitaxial) structure, the properties of the submount and the transition between chip and submount, whose behavior is shown to be consistent with the presence of a significant thermal barrier.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany


diode laser, broad area laser, beam parameter product, lateral brightness, FEM simulation, thermography.