Assessing the Impact of Thermal Barriers on the Thermal Lens Shape in High Power Broad Area Diode Lasers
25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan, Sep. 12-15, p. WD1 (2016).
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Measured thermal profiles on GaAs broad area diode lasers (Popt > 10 W, λ = 910 nm) were reproduced in FEM simulation, indicating an unforeseen thermal barrier between laser chip and metallization. An investigation of that barrier potentially yields design- and packaging improvements for increased radiance, since thermal lensing strongly determines in-plane beam quality.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany