A Novel Atmospheric Microplasma Source with Integrated GaN HEMT Microwave Power Oscillator

R. Gesche1, S. Kühn1, H.-E. Porteanu1, R. Kovacs2, and J. Scherer2

Published in:

SVC 52nd Annual Technical Conf., Santa Clara, CA, May 9-14, pp. 293-296 (2009).

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Abstract:

A novel atmospheric microplasma source is presented, where the microwave power is generated by an integrated power oscillator, which is based on a GaN HEMT transistor. A microwave resonator acts as plasma electrode, performs the impedance transformation for ignition and plasma operation, and determines the oscillation frequency. The source operates at a frequency around 2.45 GHz with a maximum oscillator power of 30W. The size of the complete source module including electrode, resonator and microwave oscillator is as small as 30 mm by 30 mm by 40 mm, the visible afterglow plasma flame has a diameter of approx. 1 mm and a length up to 5 mm.

1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
2 Aurion Anlagentechnik GmbH, Seligenstadt, Germany