A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology

M. Hossain, K. Nosaeva, B. Janke, N. Weimann, V. Krozer, W. Heinrich

Published in:

IEEE Microwave Wireless Compon. Lett., vol. 26, no. 1, pp. 49-51 (2016).

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This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers 5 dBm ± 3 dBm in the range 140-220 GHz. The dc consumption is only 41 mW. To the knowledge of the authors, this is the highest output power for a wideband transistor based frequency doubler in the 140-220 GHz frequency range published so far. The results show the ability to implement a high output power G-band source in transferred-substrate InP HBT technology.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Index Terms:

G-band, InP heterojunction bipolar transistor (HBT), millimeter wave (mm-wave) source, monolithic microwave integrated circuit (MMIC), transferred-substrate (TS), W-band.