A 315 GHz Reflection-Type Push-Push Oscillator in InP-DHBT Technology

M. Hossain, N. Weimann, V. Krozer and W. Heinrich

Published in:

Proc. 46th European Microwave Conf. (EuMC 2016), London, UK, Oct. 4-6, pp. 485-488 (2016).

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Abstract:

A 315-GHz reflection-type push-push oscillator is presented. It is realized using a 0.8 µm-emitter transferred-substrate (TS) InP-DHBT technology with an fmax of 320 GHz. The oscillator delivers -10 dBm output power. DC consumption is only 21 mW from a 1.6 volts power supply, which corresponds to 0.5 % overall DC-to-RF efficiency.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Keywords:

InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillators, reflection oscillator, sub-terahertz (THz), transferred-substrate (TS).