A 200 mW InP DHBT W-band Power Amplifier in Transferred-Substrate Technology with Integrated Diamond Heat Spreader

T. Al-Sawaf, K. Nosaeva, N.G. Weimann, V. Krozer, and W. Heinrich

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., San Francisco, USA, May 22-27, THIF2-5 (2016).

Copyright © 2016 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:

A power amplifier in 800 nm transferred-substrate InP DHBT technology is presented in this paper. The technology used in this work features an integrated diamond heat sink layer that has significant impact on the reduction of thermal resistance. This increases the DC-power limit as well as RF output power for the same transistor periphery. The power amplifier delivers 200 mW output power at 87 GHz, for a total emitter periphery of 96 µm, at a peak PAE of 20 % and for more than 25 GHz 3-dB bandwidth.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Index Terms:

Millimeter-wave power amplifier, InP DHBT, transferred substrate, diamond heat-sink, heterointegration.