A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology
IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1253-1256 (2019).
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This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6%. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.
1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Technical University of Denmark (DTU), Kgs. Lyngby, Denmark
3 Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany
distributed amplifier, InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), travelling wave amplifier.