A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

T. Shivan1, M. Hossain1, R. Doerner1, S. Schulz1, T. Johansen2, S. Boppel1, W. Heinrich1 and V. Krozer1,3

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1253-1256 (2019).

Copyright © 2019 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.


This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6%. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.

1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Technical University of Denmark (DTU), Kgs. Lyngby, Denmark
3 Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany

Index Terms:

distributed amplifier, InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), travelling wave amplifier.