A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology
Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 244-247 (2013).
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A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a doubler-amplifer chain in transferred-substrate InPHBT technology, integrated on top of the BiCMOS wafer in a wafer-level Benzocyclobutene based bonding process. The VCO operates at 82 GHz with an output power of approximately 8 dBm. The combined circuit delivers 0 dBm at 164 GHz. Measured output power agrees well with simulations. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 IHP GmbH, Frankfurt (Oder), Germany
millimeter-wave circuits; frequency doubler; hetero-integration; InP-on-BiCMOS.