A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology

T. Jensen1, T. Al-Sawaf1, M. Lisker2, S. Glisic2, M. Elkhouly2, T. Kraemer1, I. Ostermay1, C.. Meliani2, B. Tillack2, V. Krozer1, W. Heinrich1

Published in:

Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 244-247 (2013).

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Abstract:

A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a doubler-amplifer chain in transferred-substrate InPHBT technology, integrated on top of the BiCMOS wafer in a wafer-level Benzocyclobutene based bonding process. The VCO operates at 82 GHz with an output power of approximately 8 dBm. The combined circuit delivers 0 dBm at 164 GHz. Measured output power agrees well with simulations. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 IHP GmbH, Frankfurt (Oder), Germany

Keywords:

millimeter-wave circuits; frequency doubler; hetero-integration; InP-on-BiCMOS.