2.45 GHz ISM-Band RF-PA Demonstrator for GaN-HEMT optimization

F. Platz, O. Bengtsson , A. Raemer, S. Chevtchenko, W. Heinrich

Published in:

8th German Microwave Conference (GeMiC 2014), Aachen, Germany, Mar. 10-12, ITG-Fachbericht Band 246, ISBN 978-3-8007-3585-3 (2014).

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In this work empirical results of an investigation aimed at improving GaN-HEMTs for higher frequency operation are presented. Two GaN-HEMT versions with nominal 60W output power and different gate-drain distances (LGD) are investigated using load-pull measurements and in a fabricated power amplifier (PA) demonstrator for the ISM band at 2.45 GHz. The load-pull investigation shows that the optimum impedances in the 2.0. . .3.5 GHz range are very similar for both types of transistors. At 2.45GHz the shorter LGD transistor provides up to 0.7 dB improved output power (POUT) with 4% improved maximum power added efficiency (PAE). In the PA demonstrator the load-pull results are verified. The transistors show similar frequency response but in general >0.5 dB more saturated output power resulting in a 5 - 10% points improvement in PAE for the shorter LGD transistor.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany