220-325 GHz high-isolation SPDT switch in InP DHBT technology
Electron. Lett., vol. 54, no. 21, pp. 1222-1224 (2018).
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A broadband single-pole-double-throw (SPDT) switch is presented covering 220-325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs shunt-topology. The circuit achieves an isolation of >36 dB within the band with very low DC power of 9 mW, benefitting from the low intrinsic capacitance of the transistors. This is the highest reported isolation for wideband SPDT switches covering 220-325 GHz. This three-stage SPDT switch also demonstrates the highest isolation of 12 dB per stage in this frequency range.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
2 Universität Duisburg-Essen, Duisburg, Germany
3 Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany