17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier

X. Wang, G. Erbert, H. Wenzel, P. Crump, B. Eppich, S. Knigge, P. Ressel, A. Ginolas, A. Maaßdorf, and G. Tränkle

Published in:

IEEE Photonics Technol. Lett., vol. 25, no. 2, pp. 115-118 (2013).

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High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in a master-oscillator power amplifier-system. We compare the influence of lateral geometric design on amplifier performance, by using devices with super large optical waveguide (4.8 µm) and relative low confinement factor (Γ = 1%). We find that the use of an amplifier with a larger active region results in both high power and high beam quality. An abandonment of cavity spoiling grooves leads to strongly improved beam characteristics.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Index Terms:

High power, lateral structure, near-diffractionlimited beam quality, semiconductor optical amplifier.