1120 nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy
Proc. SPIE, vol. 8640, Photonics West, San Francisco, USA, Feb. 02-07, 86401J (2013).
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Highly brilliant diode lasers at 1120nm with a high optical output power, nearly diffraction limited beam and narrow spectral line width are increasingly important for non-linear frequency conversion to 560 nm. We present experimental results about edge-emitting distributed Bragg reflector (DBR) tapered diode lasers emitting at 1120 nm. The investigated lasers show an output power of up to 8W with a conversion efficiency of about 40%, and a lifetime of more than 5000 h at 5 W. The lasers also exhibit a small vertical divergence <15° full width at half maximum (FWHM), a nearly diffraction limited beam quality, and a narrow spectral line width with FWHM smaller than 10pm. These properties allow the lasers to be used for future second harmonic (SH) generation.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
1120 nm, diode laser, high-brightness, high brilliant, Distributed Bragg Reflector, tapered diode laser, beam quality, second harmonic generation.