0.25-µm GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors

S. Boppel1, M. Ragauskas2, A. Hajo1, M. Bauer1, A. Lisauskas1,2,3, S. Chevtchenko4, A. Rämer4, I. Kašalynas2, G. Valušis2, H.-J. Würfl4, W. Heinrich4, G. Tränkle4, V. Krozer1,4, and H.G. Roskos1

Published in:

IEEE Trans. Terahertz Sci. Technol., vol. 6, no. 2, pp. 348-350 (2016).

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This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz radiation (TeraFETs) were realized using a 0.25-µm AlGaN/GaN process. Integrated bow-tie antennas are connected to the source, drain and gate terminals of electrically identical transistors in various ways. If radiation power is coupled symmetrically to the source and drain sides of the transistors' channels, TeraFETs become sensitive to gradient-intensity of the illumination power. It is found that fully asymmetric coupling, nontrivial to ensure at THz-frequencies, is required for a pure response to incident power.

1 Physikalisches Institut, Johann Wolfgang Goethe-Universität, 60438 Frankfurt, Germany
2 Center for Physical Sciences and Technology, Vilnius, Lithuania
3 Department of Radiophysics, Vilnius University, Vilnius LT10222, Lithuania
4 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Index Terms:

AlGaN/GaN HEMTs, field-effect transistors, plasma-wave-based detection, submillimeter-wave integrated circuits, terahertz radiation detector.