Efficient Tm:YAG and Tm:LuAG lasers pumped by 681 nm tapered diodes
Appl. Opt., vol. 58, no. 11, pp. 2973-2980 (2019).
Publikationen 2019
Efficient Tm:YAG and Tm:LuAG lasers pumped by 681 nm tapered diodes
Improving the spectral performance of extended cavity diode lasers using angled-facet laser diode chips
Appl. Phys. B, vol. 125, no. 4, p. 125:66 (2019).
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
Int. J. Microwave Wireless Technolog., vol. 11, no. 2, pp. 121-129 (2019).
Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers
Opt. Quant. Electron., vol. 51, no. 3, pp. 869 (2019).
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
J. Cryst. Growth, vol. 512, pp. 142-146 (2019).
Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers
Semicond. Sci. Technol., vol. 34, no. 03, pp. 035019 (2019).
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
IEEE Photonics Technol. Lett., vol. 31, no. 7, pp. 529-532 (2019).
Traveling Wave Analysis of Non-Thermal Far-Field Blooming in High-Power Broad-Area Lasers
IEEE J. Quantum Electron., vol. 55, no. 2, pp. 2000207 (2019).
Correlated mode analysis of a microwave driven ICP source
Plasma Sources Sci. Technol., vol. 28, no. 03, pp. 035013 (2019).
Integrated Thermal Silica Micro-Resonator Waveguide System With Ultra-Low Fluorescence
IEEE Photonics Technol. Lett., vol. 31, no. 6, pp. 479-482 (2019).
Rapid and Adjustable Shifted Excitation Raman Difference Spectroscopy at 785 nm
Proc. SPIE 10894, Plasmonics in Biology and Medicine XVI, Photonics West, San Francisco, USA, Feb 1-6, 108940W (2019).
Tailored diode lasers - enabling Raman spectroscopy in the presence of disturbing fluorescence and background light
Proc. SPIE 10894, Plasmonics in Biology and Medicine XVI, Photonics West, San Francisco, USA, Feb 1-6, 1089411 (2019).
Highly stable fiber lasers for satellite-based gravitational measurements
Proc. SPIE 10897, Fiber Lasers XVI: Technology and Systems, Photonics West, San Francisco, USA, Feb 1-6, 108972H (2019).
Single mode 500 mW at 633 nm using all semiconductor master-oscillator and a dual stage amplifier
Proc. SPIE 10899, Components and Packaging for Laser Systems V, Photonics West, San Francisco, USA, Feb 1-6, 1089906 (2019).
High-power-class QCW Red Laser Bars and Stacks for Pump and Direct Application
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, Photonics West, San Francisco, USA, Feb 1-6, 1090009 (2019).
Current Spreading Suppression by O- and Si-Implantation in high Power Broad Area Diode Lasers
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, Photonics West, San Francisco, USA, Feb 1-6, 109000M (2019).
Recent progress in brightness scaling by coherent beam combining of tapered amplifiers for efficient high power frequency doubling
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, Photonics West, San Francisco, USA, Feb 1-6, 109000O (2019).
Ultra-narrow linewidth diode laser based on resonant optical feedback
Proc. SPIE 10910, Free-Space Laser Communications XXXI, Photonics West, San Francisco, USA, Feb 1-6, 109101U (2019).
Tunable Y-branch dual-wavelength diode lasers in the VIS and NIR range for sensor applications
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 1093913 (2019).
Reliability of high-power 1030 nm DBR tapered diode lasers with different lateral layouts
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109391G (2019).
Investigation of controlled external feedback on the properties of low and high-power frequency stabilized diode lasers
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109391J (2019).
NiCr resistors for terahertz applications in an InP DHBT process
Microelectron. Eng., vol. 208, pp. 1-6 (2019).
Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics
Mater. Sci. Semicond. Process., vol. 91, pp. 146-150 (2019).
Coherent combining of high brightness tapered amplifiers for efficient non-linear conversion
Opt. Express, vol. 27, no. 2, pp. 928-937 (2019).
Influence of quartz on silicon incorporation in HVPE grown AlN
J. Cryst. Growth, vol. 507, pp. 295-298 (2019).
Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers
Semicond. Sci. Technol., vol. 34, no. 01, pp. 015005 (2019).
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
J. Cryst. Growth, vol. 505, pp. 69-73 (2019).
