Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
Semicond. Sci. Technol., vol. 33, no. 9, pp. 095017 (2018).
Publikationen 2018
Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs
IEEE Trans. Electron Devices, vol. 65, no. 9, pp. 3878-3883 (2018).
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ∼ 0.53 THz
IEEE Trans. Electron Devices, vol. 65, no. 9, pp. 3704-3710 (2018).
Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology
IEEE Trans. Electron Devices, vol. 65, no. 8, pp. 3176-3184 (2018).
Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors
Opt. Lett., vol. 43, no. 15, pp. 3522-3525 (2018).
Future technology trends
K. Suganuma (ed.), "Woodhead Publishing Series in Electronic and Optical Materials, Wide Bandgap Power Semiconductor Packaging", Woodhead Publishing, ISBN-13: 978-0-08-102094-4, Part One, chapter 1, pp. 3-53 (2018).
Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power
Appl. Sci., vol. 8, no. 7, pp. 1104 (2018).
GaN-Based Vertical n-Channel MISFETs on Free Standing Ammonothermal GaN Substrates
phys. stat. sol. (a), vol. 215, no. 8, pp. 1700422 (2018).
Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
phys. stat. sol. (a), vol. 215, no. 8, pp. 1700643 (2018).
Wideband Dynamic Drain Current Measurements with a Galvanically Isolated Probe Targeting Supply-Modulated RF Power Amplifiers for 5G Infrastructure
91st ARFTG Microwave Measurement Conference (ARFTG), Philadelphia, USA, Jun. 15 (2018).
On the Importance of Calibration Standards Definitions for On-Wafer Measurements up to 110 GHz
91st ARFTG Microwave Measurement Conference (ARFTG), Philadelphia, USA, Jun. 15 (2018).
Improving Wafer-Level Calibration Consistency with TMRR Calibration Method
91st ARFTG Microwave Measurement Conference (ARFTG), Philadelphia, USA, Jun. 15 (2018).
Impact of Drain-Lag Induced Current Degradation for a Dynamically Operated GaN-HEMT Power Amplifier
IEEE MTT-S Int. Microw. Symp. Dig., Philadelphia, USA, Jun. 10-15, pp. 168-171 (2018).
An Active High Conversion Gain W-Band Up-Converting Mixer for Space Applications
IEEE MTT-S Int. Microw. Symp. Dig., Philadelphia, USA, Jun. 10-15, pp. 682-685 (2018).
Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs
IEEE MTT-S Int. Microw. Symp. Dig., Philadelphia, USA, Jun. 10-15, pp. 728-731 (2018).
Digital Sequential PA for Flexible Efficiency Tuning Over Wide Power Back-Off Range
IEEE MTT-S Int. Microw. Symp. Dig., Philadelphia, USA, Jun. 10-15, pp. 1226-1229 (2018).
Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers
IEEE MTT-S Int. Microw. Symp. Dig., Philadelphia, USA, Jun. 10-15, pp. 1230-1233 (2018).
Effects Degrading Accuracy of CPW mTRL Calibration at W Band
IEEE MTT-S Int. Microw. Symp. Dig., Philadelphia, USA, Jun. 10-15, pp. 1296-1299 (2018).
Novel approach for E/D transistors integration in GaN HEMT technology
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2018), Austin, USA, May 7-10, pp. 3.3 (2018).
GaN-based digital transmitter architectures for 5G
International Symposium on VLSI Design, Automation and Test (VLSI-DAT 2018), Hsinchu, Taiwan, Apr 16-19 (2018).
Superconductive coupling in tailored [(SnSe)1+δ]m(NbSe2)1 multilayers
Supercond. Sci. Technol., vol. 31, no. 6, pp. 065006 (2018).
Picosecond Pulse Generation and Pulse Train Stability of A Monolithic Passively Mode-Locked Semiconductor Quantum-Well Laser at 1070 nm
IEEE J. Quantum Electron., vol. 54, no. 3, pp. 2000609 (2018).
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm
J. Cryst. Growth, vol. 491, pp. 31-35 (2018).
Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers
Electron. Lett., vol. 54, no. 10, pp. 640-641 (2018).
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Nano Res., vol. 11, no. 5, pp. 2885-2893 (2018).
Wavelength-Stabilized High-Pulse-Power Laser Diodes for Automotive LiDAR
phys. stat. sol. (a), vol. 215, no. 8, pp. 1700439 (2018).
Red-emitting distributed-feedback ridge-waveguide laser based on high-order surface grating
Electron. Lett., vol. 54, no. 9, pp. 582-583 (2018).
Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice
Phys. Rev. B, vol. 97, no. 16, pp. 161303(R) (2018).
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
Semicond. Sci. Technol., vol. 33, no. 3, pp. 035015 (2018).
A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications
11th German Microwave Conference (GeMiC 2018), Freiburg, Germany, Mar. 12-14, ISBN 978-3-9812668-8-7, pp. 17-20 (2018).
Chalmers GaN HEMT Charge Model Revisited
11th German Microwave Conference (GeMiC 2018), Freiburg, Germany, Mar. 12-14, ISBN 978-3-9812668-8-7, pp. 164-167 (2018).
Compact RGBY light sources with high luminance for laser display applications
Opt. Rev., vol. 25, no. 1, Laser Display and Lighting Conference (LDC'17), Yokohama, Japan, Apr. 19-21, pp. 149-159 (2018).
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/ sapphire
Appl. Phys. Lett., vol. 112, no. 04, pp. 041110 (2018).
Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
J. Appl. Phys., vol. 123, no. 16, pp. 161551 (2018).
Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers
J. Appl. Phys., vol. 123, no. 12, pp. 125703 (2018).
Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation
Electron. Lett., vol. 54, no. 6, pp. 374-376 (2018).
Advanced in-situ control for III-nitride RF power device epitaxy
Semicond. Sci. Technol., vol. 33, no. 4, pp. 045014 (2018).
Degradation effects of the active region in UV-C light-emitting diodes
J. Appl. Phys., vol. 123, no. 10, pp. 104502 (2018).
Shifted Excitation Raman Difference Spectroscopy - From Diode Lasers to in-situ Applications
Proc. SPIE 10509, Plasmonics in Biology and Medicine XV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1050903 (2018).
Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications
Proc. SPIE 10513, Components and Packaging for Laser Systems IV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051309 (2018).
Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers
Proc. SPIE 10513, Components and Packaging for Laser Systems IV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051319 (2018).
Forward Development of kW-class Diode Laser Bars
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051409 (2018).
Extreme Triple Asymmetric (ETAS) Epitaxial Designs for Increased Efficiency at High Powers in 9xx-nm Diode Lasers
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140A (2018).
970-nm ridge waveguide diode laser bars for high power DWBC systems
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140E (2018).
Wavelength stabilized high pulse power laser diodes for automotive LiDAR
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140Q (2018).
Coherent combining of high brightness tapered lasers in Master Oscillator Power Amplifier configuration
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140T (2018).
Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140X (2018).
Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range
Proc. SPIE 10518, Laser Resonators, Microresonators, and Beam Control XX, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051817 (2018).
Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence
Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105261H (2018).
633-nm single-mode master-oscillator power-amplifier module
Proc. SPIE 10528, Optical Components and Materials XV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105280D (2018).
From heterostructure design to package: development of efficient and reliable UVB LEDs
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1053220 (2018).
Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light
Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1053521 (2018).
Frequency locking of compact laser-diode modules at 633 nm
Proc. SPIE 10539, Photonic Instrumentation Engineering V, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1053907 (2018).
10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530A (2018).
Pico- and Nanosecond Investigations of the Lateral Nearfield of Broad Area Lasers under Pulsed High-Current Excitation
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530K (2018).
Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530M (2018).
Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530N (2018).
Reflector and tuning elements for widely-tunable GaAs based sampled grating DBR lasers
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1055310 (2018).
Diffraction limited 1064 nm monolithic DBR-master oscillator power amplifier with more than 7 W output power
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531C (2018).
Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531D (2018).
5.5 nm wavelength tunable high power MOPA diode laser system at 971 nm
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531F (2018).
Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531G (2018).
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress
Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1055410 (2018).
Thermocompression bonding for high-power-UV LEDs
Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105541B (2018).
High-Efficiency Broad-Ridge Waveguide Lasers
IEEE Photonics Technol. Lett., vol. 30, no. 6, pp. 545-548 (2018).
Influence of nonlinear effects on the characteristics of pulsed high-power broad-area distributed Bragg reflector lasers
Opt. Quant. Electron., vol. 50, no. 2, pp. 88 (2018).
Imaging and Spectroscopic Sensing with Low-Repetition-Rate Terahertz Pulses and GaN TeraFET Detectors
Int. J. Infrared Millimeter Terahertz Waves, vol. 39, no. 3, pp. 262-272 (2018).
Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs
Semicond. Sci. Technol., vol. 33, no. 3, pp. 035005 (2018).
Intensity Noise Transfer Through a Diode-Pumped Titanium Sapphire Laser System
IEEE J. Quantum Electron., vol. 54, no. 1, pp. 1700209 (2018).
Compact Deep UV System at 222.5 nm Based on Frequency Doubling of GaN Laser Diode Emission
IEEE Photonics Technol. Lett., vol. 30, no. 3, pp. 289-292 (2018).
DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings
IEEE Photonics Technol. Lett., vol. 30, no. 3, pp. 231-234 (2018).
Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor
J. Cryst. Growth, vol. 483, pp. 297-300 (2018).
