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220-325 GHz high-isolation SPDT switch in InP DHBT technology

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Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976nm

Semicond. Sci. Technol., vol. 33, no. 11, pp. 115001 (2018).

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Modeling and simulation of high-power broad-area semiconductor lasers with optical feedback from different external cavities

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 7-8 (2018).

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IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 27-28 (2018).

C. Frevert, S. Knigge, G. Erbert, F. Bugge, and P. Crump

Influence of quantum well barrier height on series resistance in GaAs-based broad area diode lasers

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 117-118 (2018).

A. Knigge, A. Klehr, H. Wenzel, A. Zeghuzi, J. Fricke, A. Maaßdorf, A. Liero, G. Tränkle

High pulse power wavelength stabilized laser diodes for automotive LiDAR

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 225-226 (2018).

K. Paschke, G. Blume, A. Ginolas, D. Feise, W. John, N. Werner, F. Bugge, B. Sumpf

Reliable 2 W DBR-tapered diode lasers lasing at 1180 nm based on highly strained quantum wells

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 231-232 (2018).

H.K. Cho, A. Külberg, N. Lobo Ploch, J. Rass, J. Ruschel, T. Kolbe, A. Knauer, A. Braun, O. Krüger, S. Einfeldt, M. Weyers, and M. Kneissl

Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning

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J.A. Freitas Jr., J.C. Culbertson, E.R. Glaser, E. Richter, M. Weyers, A.C. Oliveira, V.K. Garg

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V.Z. Tronciu, H. Wenzel, M. Radziunas, M. Reggentin, J. Wiedmann, A. Knigge

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Near Infrared Diode Laser THz Systems

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Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With f_max ∼ 0.53 THz

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Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology

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T.-P. Nguyen, H. Wenzel, O. Brox, F. Bugge, P. Ressel, M. Schiemangk, A. Wicht, T.Q. Tien and G. Tränkle

Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

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E. Bahat-Treidel, O. Hilt, J. Stöver, V. Hoffmann, F. Brunner, K. Ickert, S. Hochheim, F. Naumann, H. Gargouri, B. Martinez, M. Weyers, and J. Würfl

GaN-Based Vertical n-Channel MISFETs on Free Standing Ammonothermal GaN Substrates

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N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl

Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs

phys. stat. sol. (a), vol. 215, no. 8, pp. 1700643 (2018).

N. Wolff, T. Hoffmann, W. Heinrich, O. Bengtsson

Wideband Dynamic Drain Current Measurements with a Galvanically Isolated Probe Targeting Supply-Modulated RF Power Amplifiers for 5G Infrastructure

91st ARFTG Microwave Measurement Conference (ARFTG), Philadelphia, USA, Jun. 15 (2018).

T. Probst, Sherko Zinal, R. Doerner, U. Arz

On the Importance of Calibration Standards Definitions for On-Wafer Measurements up to 110 GHz

91st ARFTG Microwave Measurement Conference (ARFTG), Philadelphia, USA, Jun. 15 (2018).

A. Rumiantsev, T. Fu, and R. Doerner

Improving Wafer-Level Calibration Consistency with TMRR Calibration Method

91st ARFTG Microwave Measurement Conference (ARFTG), Philadelphia, USA, Jun. 15 (2018).

N. Wolff, T. Hoffmann, W. Heinrich and O. Bengtsson

Impact of Drain-Lag Induced Current Degradation for a Dynamically Operated GaN-HEMT Power Amplifier

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M. Hossain, M. Hrobak, D. Stoppel, W. Heinrich and V. Krozer

An Active High Conversion Gain W-Band Up-Converting Mixer for Space Applications

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P. Luo, F. Schnieder, O. Bengtsson, W. Heinrich and M. Rudolph

Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs

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A. Wentzel, and W. Heinrich

Digital Sequential PA for Flexible Efficiency Tuning Over Wide Power Back-Off Range

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S. Preis, N. Wolff, F. Lenze, A. Wiens, R. Jakoby, W. Heinrich, O. Bengtsson

Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers

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G.N. Phung, F.J. Schmückle, R. Doerner, W. Heinrich, T. Probst, U. Arz

Effects Degrading Accuracy of CPW mTRL Calibration at W Band

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K.Y. Osipov, I. Ostermay, F. Brunner, J. Würfl, and G. Tränkle

Novel approach for E/D transistors integration in GaN HEMT technology

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F. Hühn, A. Wentzel, W. Heinrich

GaN-based digital transmitter architectures for 5G

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M. Trahms, C. Grosse, M.B. Alemayehu, O.K. Hite, O. Chiatti, A. Mogilatenko, D.C. Johnson and S.F. Fischer

Superconductive coupling in tailored [(SnSe)_1+δ]_m(NbSe₂)₁ multilayers

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Picosecond Pulse Generation and Pulse Train Stability of A Monolithic Passively Mode-Locked Semiconductor Quantum-Well Laser at 1070 nm

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Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

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B. Döpke, N. Surkamp, Y. Hu, C. Brenner, A. Klehr, A. Knigge, G. Tränkle and M.R. Hofmann

Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

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H. Küpers, R.B. Lewis, A. Tahraoui, M. Matalla, O. Krüger, F. Bastiman, H. Riechert, and L. Geelhaar

Diameter evolution of selective area grown Ga-assisted GaAs nanowires

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Wavelength-Stabilized High-Pulse-Power Laser Diodes for Automotive LiDAR

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J. Fricke, O. Brox, H. Wenzel, M. Matalla, P. Ressel and A. Knigge

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Influence of template properties and quantum well number on stimulated emission from Al_0.7Ga_0.3N/Al_0.8Ga_0.2N quantum wells

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T. Shivan, N. Weimann, M. Hossain, T. Johansen, D. Stoppel, S. Schulz, O. Ostinelli, R. Doerner, C.R. Bolognesi, V. Krozer, W. Heinrich

A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications

11th German Microwave Conference (GeMiC 2018), Freiburg, Germany, Mar. 12-14, ISBN 978-3-9812668-8-7, pp. 17-20 (2018).

P. Luo, F. Schnieder, and M. Rudolph

Chalmers GaN HEMT Charge Model Revisited

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K. Paschke, G. Blume, N. Werner, A. Müller, B. Sumpf, J. Pohl, D. Feise, P. Ressel, A. Sahm, R. Bege, J. Hofmann, D. Jedrzejczyk, G. Tränkle

Compact RGBY light sources with high luminance for laser display applications

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N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, and M. Kneissl

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/ sapphire

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S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

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J. Rieprich, M. Winterfeldt, R. Kernke, J.W. Tomm, and P. Crump

Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers

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Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation

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Advanced in-situ control for III-nitride RF power device epitaxy

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J. Glaab, J. Haefke, J. Ruschel, M. Brendel, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, M. Guttmann, C. Kuhn, J. Enslin, T. Wernicke, and M. Kneissl

Degradation effects of the active region in UV-C light-emitting diodes

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M. Maiwald, B. Sumpf

Shifted Excitation Raman Difference Spectroscopy - From Diode Lasers to in-situ Applications

Proc. SPIE 10509, Plasmonics in Biology and Medicine XV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1050903 (2018).

S. Baumgärtner, S. Juhl, D. Opalevs, A. Sahm, J. Hofmann, P. Leisching, K. Paschke

Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications

Proc. SPIE 10513, Components and Packaging for Laser Systems IV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051309 (2018).

R. Platz, C. Frevert, B. Eppich, J. Rieprich, A. Ginolas, S. Kreutzmann, S. Knigge, G. Erbert, P. Crump

Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers

Proc. SPIE 10513, Components and Packaging for Laser Systems IV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051319 (2018).

S.G. Strohmaier, G. Erbert, T. Rataj, A.H. Meissner-Schenk, V. Loyo-Maldonado, C. Carstens, H. Zimer, B. Schmidt, T. Kaul, M.M. Karow, M. Wilkens and P. Crump

Forward Development of kW-class Diode Laser Bars

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051409 (2018).

T. Kaul, G. Erbert, A. Maaßdorf, D. Martin, P. Crump

Extreme Triple Asymmetric (ETAS) Epitaxial Designs for Increased Efficiency at High Powers in 9xx-nm Diode Lasers

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140A (2018).

M. Wilkens, G. Erbert, H. Wenzel, A. Knigge, P. Crump, A. Maaßdorf, J. Fricke, P. Ressel, S. Strohmaier, B. Schmidt, G. Tränkle

970-nm ridge waveguide diode laser bars for high power DWBC systems

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140E (2018).

A. Knigge, A. Klehr, H. Wenzel, A. Zeghuzi, J. Fricke, A. Maaßdorf, A. Liero, G. Tränkle

Wavelength stabilized high pulse power laser diodes for automotive LiDAR

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140Q (2018).

P. Albrodt, M. Hanna, F. Moron, J. Decker, M. Winterfeldt, G. Blume, G. Erbert, P. Crump, P. Georges and G. Lucas-Leclin

Coherent combining of high brightness tapered lasers in Master Oscillator Power Amplifier configuration

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140T (2018).

D. Feise, F. Bugge, M. Matalla, A. Thies, P. Ressel, G. Blume, J. Hofmann, and K. Paschke

Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm

Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140X (2018).

B. Sumpf, K. Paschke

Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range

Proc. SPIE 10518, Laser Resonators, Microresonators, and Beam Control XX, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1051817 (2018).

A. Zeghuzi, M. Radziunas, H. Wenzel, H.-J. Wünsche, U. Bandelow, and A. Knigge

Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence

Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105261H (2018).

G. Blume, D. Jedrzejczyk, J. Pohl, D. Feise, A. Sahm, N. Werner, C. Nölleke, P. Leisching, K. Paschke

633-nm single-mode master-oscillator power-amplifier module

Proc. SPIE 10528, Optical Components and Materials XV, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105280D (2018).

N. Lobo Ploch, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, J. Glaab, J. Ruschel, A. Andrle, S. Hagedorn, K. Hilbrich, C. Stoelmacker, S. Knigge, M. Reiner, I. Ostermay, A. Thies, D. Prasai, O. Krueger, S. Einfeldt, M. Weyers, M Kneissl

From heterostructure design to package: development of efficient and reliable UVB LEDs

Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1053220 (2018).

A. Sahm, S. Baumgärtner, J. Hofmann, P. Leisching, K. Paschke

Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light

Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1053521 (2018).

C. Nölleke, P Leisching, G. Blume, D. Jedrzejczyk, J. Pohl, D. Feise, A. Sahm, K. Paschke

Frequency locking of compact laser-diode modules at 633 nm

Proc. SPIE 10539, Photonic Instrumentation Engineering V, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1053907 (2018).

J.H. Kang, H. Wenzel, V. Hoffmann, E. Freier, L. Sulmoni, R.-S. Unger, S. Einfeldt, T. Wernicke, and M. Kneissl

10^th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530A (2018).

A. Klehr, A. Liero, H. Wenzel, A. Zeghuzi , J. Fricke, R. Staske and A. Knigge

Pico- and Nanosecond Investigations of the Lateral Nearfield of Broad Area Lasers under Pulsed High-Current Excitation

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530K (2018).

T. Prziwarka, A. Klehr, H. Wenzel, J. Fricke, F. Bugge, M. Weyers, A. Knigge and G. Tränkle

Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530M (2018).

M.A. Alloush, R.H. Pilny, C. Brenner, A. Klehr, A. Knigge, G. Tränkle, and M.R. Hofmann

Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105530N (2018).

O. Brox, H. Wenzel, P. Della Casa, M. Tawfieq, B. Sumpf, M. Weyers, and A. Knigge

Reflector and tuning elements for widely-tunable GaAs based sampled grating DBR lasers

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1055310 (2018).

C. Zink, A. Maaßdorf, J. Fricke, P. Ressel, M. Maiwald, B. Sumpf, G. Erbert, and G. Tränkle

Diffraction limited 1064 nm monolithic DBR-master oscillator power amplifier with more than 7 W output power

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531C (2018).

N. Werner, J. Wegemund, S. Gerke, D. Feise, F. Bugge, K. Paschke, and G. Tränkle

Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531D (2018).

M. Tawfieq, A. Müller, J. Fricke, P. Della Casa, P. Ressel, A. Ginolas, D. Feise, B. Sumpf, and G. Tränkle

5.5 nm wavelength tunable high power MOPA diode laser system at 971 nm

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531F (2018).

A. Müller, C. Zink, J. Fricke, F. Bugge, G. Erbert, B. Sumpf, and G. Tränkle

Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering

Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105531G (2018).

D. Monti, M. Meneghini, C. De Santi, S. Da Ruos, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl

Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress

Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 1055410 (2018).

I. Kaepplinger, D. Karolewski, G. Brockmann, T. Ortlepp, O. Brodersen, A. Thies, J. Rass, S. Einfeldt, N. Lobo-Ploch, C. Stoelmacker, F. Schnieder

Thermocompression bonding for high-power-UV LEDs

Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105541B (2018).

M. Wilkens, H. Wenzel, J. Fricke, A. Maaßdorf, P. Ressel, S. Strohmaier, A. Knigge, G. Erbert, and G. Tränkle

High-Efficiency Broad-Ridge Waveguide Lasers

IEEE Photonics Technol. Lett., vol. 30, no. 6, pp. 545-548 (2018).

A. Zeghuzi, M. Radziunas, H.-J. Wünsche, A. Klehr, H. Wenzel, A. Knigge

Influence of nonlinear effects on the characteristics of pulsed high-power broad-area distributed Bragg reflector lasers

Opt. Quant. Electron., vol. 50, no. 2, pp. 88 (2018).

D. Voß, W. Zouaghi, M. Jamshidifar, S. Boppel, C. McDonnell, J.R.P. Bain, N. Hempler, G.P.A. Malcolm, G.T. Maker, M. Bauer, A. Lisauskas, A. Rämer, S.A. Shevchenko, W. Heinrich, V. Krozer, H.G. Roskos

Imaging and Spectroscopic Sensing with Low-Repetition-Rate Terahertz Pulses and GaN TeraFET Detectors

Int. J. Infrared Millimeter Terahertz Waves, vol. 39, no. 3, pp. 262-272 (2018).

T. Kaul, G. Erbert, A. Maaßdorf, S. Knigge and P. Crump

Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

Semicond. Sci. Technol., vol. 33, no. 3, pp. 035005 (2018).

M. Tawfieq, A.K. Hansen, O.B. Jensen, D. Marti, B. Sumpf, and P.E. Andersen

Intensity Noise Transfer Through a Diode-Pumped Titanium Sapphire Laser System

IEEE J. Quantum Electron., vol. 54, no. 1, pp. 1700209 (2018).

N. Ruhnke, A. Müller, B. Eppich, M. Maiwald, B. Sumpf, G. Erbert, and G. Tränkle

Compact Deep UV System at 222.5 nm Based on Frequency Doubling of GaN Laser Diode Emission

IEEE Photonics Technol. Lett., vol. 30, no. 3, pp. 289-292 (2018).

J.H. Kang, H. Wenzel, V. Hoffmann, E. Freier, L. Sulmoni, R.-S. Unger, S. Einfeldt, T. Wernicke, and M. Kneissl

DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings

IEEE Photonics Technol. Lett., vol. 30, no. 3, pp. 231-234 (2018).

J. Jeschke, A. Knauer, M. Weyers

Si impurity concentration in nominally undoped Al_0.7Ga_0.3N grown in a planetary MOVPE reactor

J. Cryst. Growth, vol. 483, pp. 297-300 (2018).

Publikationen 2018

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