Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers
Appl. Phys. Lett., vol. 110, no. 26, pp. 263504 (2017).
Publikationen 2017
Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers
Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780 nm
Appl. Opt., vol. 56, no. 19, pp. 5566-5572 (2017).
Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2017), Indian Wells, USA, May 22-25, pp. 12.4 (2017).
DFB lasers with apodized surface gratings for wavelength stabilization and high efficiency
Semicond. Sci. Technol., vol. 32, no. 7, pp. 075012 (2017).
Direct Modulation Capabilities of Micro-Integrated Laser Sources in the Yellow-Green Spectral Range
IEEE Photonics Technol. Lett., vol. 29, no. 12, pp. 995-998 (2017).
JOKARUS - design of a compact optical iodine frequency reference for a sounding rocket mission
EPJ Quantum Technology, vol. 4:9, pp. 1-10 (2017).
100-MHz GaN-HEMT Class-G Supply Modulator for High-Power Envelope-Tracking Applications
IEEE Trans. Microwave Theory Tech., vol. 65, no. 3, pp. 872-880 (2017).
Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm
Electron. Lett., vol. 53, no. 11, pp. 744-746 (2017).
Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern
Semicond. Sci. Technol., vol. 32, no. 4, pp. 045019 (2017).
High-power broad-area buried-mesa lasers
Semicond. Sci. Technol., vol. 32, no. 6, pp. 065009 (2017).
Design and Realization of a Miniaturized DFB Diode Laser-Based SHG Light Source With a 2-nm Tunable Emission at 488 nm
IEEE Trans. Compon. Packag. Manuf. Technol., vol. 7, no. 5, pp. 720-725 (2017).
Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
Int. J. Microwave Wireless Technolog., vol. 9, no. 2, pp. 259-268 (2017).
Flip-Chip Approach for 500 GHz Broadband Interconnects
IEEE Trans. Microwave Theory Tech., vol. 65, no. 4, pp. 1215-1225 (2017).
Manufacturable Low-Cost Flip-Chip Mounting Technology for 300-500-GHz Assemblies
IEEE Trans. Compon. Packag. Manuf. Technol., vol. 7, no. 4, pp. 494-501 (2017).
Femtosecond semiconductor laser system with resonator-internal dispersion adaptation
Opt. Lett., vol. 42, no. 8, pp. 1524-1527 (2017).
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
Photonics Res., vol. 5, no. 2, pp. A44-A51 (2017).
Concept and numerical simulations of a widely tunable GaAs-based sampled-grating diode laser emitting at 976 nm
IET Optoelectron., vol. 11, no. 2, pp. 73-78 (2017).
Terahertz frequency generation with monolithically integrated dual wavelength distributed Bragg reflector semiconductor laser diode
IET Optoelectron., vol. 11, no. 2, pp. 49-52 (2017).
Generation of optical picosecond pulses with monolithic colliding-pulse mode-locked lasers containing a chirped double-quantum-well active region
IET Optoelectron., vol. 11, no. 2, pp. 79-85 (2017).
Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm
Appl. Phys. B, vol. 123, p. 123:109 (2017).
Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
J. Cryst. Growth, vol. 464, pp. 185-189 (2017).
Electro-optical characteristics of 808nm ridge-waveguide lasers operated with high-current nanosecond pulses
Semicond. Sci. Technol., vol. 32, no. 04, pp. 045016 (2017).
Numerical study of high-power semiconductor lasers for operation at subzero temperatures
Semicond. Sci. Technol., vol. 32, no. 04, pp. 045004 (2017).
In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs
Proc. SPIE 10124, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101240Q (2017).
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
Proc. SPIE 10124, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101240T (2017).
1030 nm DBR tapered diode laser with up to 16 W of optical output power
Proc. SPIE 10123, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101231B (2017).
Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm
Proc. SPIE 10123, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101230V (2017).
785 nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm
Proc. SPIE 10123, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101230T (2017).
1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode locking or pulse gating operation
Proc. SPIE 10123, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101230D (2017).
Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy
Proc. SPIE 10123, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1012308 (2017).
AlGaN-based metal-semiconductor-metal photodetectors with high external quantum effciency at low operating voltage
Proc. SPIE 10104, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101040J (2017).
633 nm single-mode laser-diode module with PM fiber output
Proc. SPIE 10100, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1010018 (2017).
Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser
Proc. SPIE 10088, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1008808 (2017).
3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser
Proc. SPIE 10088, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1008803 (2017).
Non-Uniform DFB-Surface-Etched Gratings for Enhanced Performance High Power, High Brightness Broad Area Lasers
Proc. SPIE 10086, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 100860R (2017).
Coherent beam combining architectures for high power tapered laser arrays
Proc. SPIE 10086, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 100860O (2017).
Miniaturized laser amplifier modules for wavelengths of 1180 nm with PM-fiber input and more than 1 W optical output power
Proc. SPIE 10086, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 100860H (2017).
Progress in joule-class diode laser bars and high brightness modules for application in long-pulse pumping of solid state amplifiers
Proc. SPIE 10086, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 100860E (2017).
kW-class Diode Laser Bars
Proc. SPIE 10085, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 100850F (2017).
Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space
Proc. SPIE 10085, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 100850F (2017).
Compact diode laser module at 1116 nm with an integrated optical isolation and a PM-SMF output
Proc. SPIE 10085, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1008506 (2017).
Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers
Proc. SPIE 10085, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1008502 (2017).
Compact single-mode diode laser in the visible spectral range
Proc. SPIE 10082, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1008225 (2017).
In-situ shifted excitation Raman difference spectroscopy: development and demonstration of a portable sensor system at 785 nm
Proc. SPIE 10054, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 1005409 (2017).
Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
Semicond. Sci. Technol., vol. 32, no. 03, pp. 035020 (2017).
The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
Appl. Phys. Lett., vol. 110, no. 08, pp. 081103 (2017).
Efficient generation of 3.5 W laser light at 515 nm by frequency doubling a single-frequency high power DBR tapered diode laser
Opt. Commun., vol. 392, pp. 167-170 (2017).
Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration
IEEE Microwave Mag., vol. 18, no. 2, pp. 74-82 (2017).
On Distortion in Digital Microwave Power Amplifiers
Frequenz, vol. 71, no. 1-2, pp. 11-17 (2017).
Autonomous frequency stabilization of two extended-cavity diode lasers at the potassium wavelength on a sounding rocket
Appl. Opt., vol. 56, no. 5, pp. 1388-1396 (2017).
Method for in-depth characterization of electro-optic phase modulators
Appl. Opt., vol. 56, no. 4, pp. 1246-1252 (2017).
The Digital Power Amplifier for the Wireless Infrastructure: Status and Prospects
IEEE Topical Conference on RF/Power Amplifiers for Wireless and Radio Applications (PAWR), digest, Phoenix, USA, Jan. 15-18, pp. 14-17 (2017).
Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 2, 2000108 (2017).
Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth
J. Cryst. Growth, vol. 462, pp. 18-23 (2017).
Defect-Related Degradation of AlGaN-Based UV-B LEDs
IEEE J. Quantum Electron., vol. 53, no. 1, 2200109 (2017).
Instabilities and Bifurcations of a DFB Laser Frequency-Stabilized by a High-Finesse Resonator
IEEE J. Quantum Electron., vol. 53, no. 1, 2200109 (2017).
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
IEEE Photonics Technol. Lett., vol. 29, no. 1, pp. 138-141 (2017).
