Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration
N. Weimann1, M. Hossain1, V. Krozer1, W. Heinrich1, M. Lisker2, A. Mai2, B. Tillack2
Published in:
IEEE Microwave Mag., vol. 18, no. 2, pp. 74-82 (2017).
Abstract:
The push to conquer the sparsely used electromagnetic spectrum between 100 and 1,000 GHz, commonly known as the millimeter-wave (mmW) and sub-mmW regions, is now in full force. The current rapid development of electronic circuits and subsystems beyond 100 GHz is enabled by improvements in high-frequency semiconductor technology and packaging techniques. In this article, we highlight recent advances we have developed in heterogeneous semiconductor-material chip integration for application toward the mmW frequency bands - in essence, a waferlevel integration approach that replaces chip-to-chip connections with monolithic integration.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Innovations for High Performance Microelectronics, Leibniz Institut für Innovative Mikroelektronik (IHP), Frankfurt, Germany
Keywords:
Indium phosphide, III-V semiconductor materials, Silicon, Radio frequency, Metals, Heterojunction bipolar transistors, BiCMOS integrated circuits.
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