A.I. Bawamia, B. Eppich, K. Paschke, H. Wenzel, F. Schnieder, G. Erbert, G. Tränkle

Published in:

Appl. Phys. B, vol. 97, no. 1, pp. 95-101 (2009).

Abstract:

Due to the build-up of temperature gradients along their width, semiconductor laser diodes tend to be affected by thermal lensing effects. We propose a simple and easy-to-implement experiment in order to determine the thermal lens coefficient in a broad area semiconductor laser amplifier during operation. The results obtained are compared to simulations of the temperature distribution in the laser structure. In order to further validate our method, we compare the measured M² value of a free running broad area laser diode with the calculated M² of such a laser under the influence of a thermal lens as predicted by diffraction theory of first-order optical resonators. The experimental results are seen to be in good agreement with the calculations.

PACS:

42.55.Px, 42.60.Jf.

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