Defect-Related Degradation of AlGaN-Based UV-B LEDs
D. Monti1, M. Meneghini1, C. De Santi1, G. Meneghesso1, E. Zanoni1, J. Glaab2, J. Rass2,3, S. Einfeldt2, F. Mehnke3, J. Enslin3, T. Wernicke3, and M. Kneissl2,3
Published in:
IEEE J. Quantum Electron., vol. 53, no. 1, 2200109 (2017).
Abstract:
This paper describes an extensive analysis of the degradation of (InAlGa)N-based UV-B light-emitting diodes (LEDs) submitted to constant current stress. This paper is based on combined electrical characterization, spectral analysis of the emission, deep-level transient spec- troscopy (DLTS) and photocurrent (PC) spectroscopy. The results of this analysis demonstrate that: 1) UV-B LEDs show a gradual degradation when submitted to constant current stress; the decrease in optical power is stronger for low measuring current levels, indicating that degradation is related to the increase in Shockley-Read-Hall (SRH) recombination; 2) the current-voltage characteristics measured before/during stress show an increase in the current below the turn-on voltage, that is ascribed to the increase in trap- assisted tunneling (TAT) components; and 3) DLTS analysis and PC spectroscopy measurements were carried out to identify the properties of the defects responsible for the degradation of the optical and electrical characteristics. The results indicate that stress induces or activates defects centered around 2.5 eV below the conduction band edge. These defects, close to midgap, can explain both the increased SRH recombination and the increase in TAT components detected after stress. Moreover, the DLTS measurements allowed to identify the signature of Mg-related acceptor traps.
1 Department of Information Engineering, University of Padua, 35131 Padua, Italy
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
3 Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
Index Terms:
AlGaN, degradation, light emitting diodes (LEDs), stress, UV-B.
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