T. Hoffmann, A. Klehr, A. Liero, G. Erbert and W. Heinrich

Published in:

Electron. Lett., vol. 51, no. 1, pp. 83-85 (2015).

Abstract:

A compact gain-switched nanosecond diode laser pulse source at 920 nm with an output energy of 13 µJ is presented. The developed nanosecond electronic driver is based on GaN transistors and controlled by transistor-transistor logic compatible input pulses. A peak current of more than 430 A for 20-50 ns-long pulses with a repetition rate up to 100 kHz and an electrical efficiency of more than 50% is reached. About 50 ns optical pulses with a peak power of 250 W (13 µJ) are generated with a tapered ridge waveguide bar with 29 emitters. The rise and fall time of the pulses is about 13 ns.

Keywords:

Waveguides and microwave transmission lines; Semiconductor lasers; Other field effect devices; Design of specific laser systems; Optical bistability, multistability and switching; Lasing action in semiconductors; Optical bistability, multistability and switching

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