H. Wenzel

Published in:

6th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2006), Singapore, Sep. 11-14, ISBN 0-7803-9755-X, pp. 7-8 (2006).

Abstract:

The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN QWs are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k.p Schrodinger equation taking into account charges due to polarization fields, doping and free carriers. The results are used to investigate the dependence of the luminescence and gain spectra on the carrier injection

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