785 nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm
B. Sumpf, J. Kabitzke, J. Fricke, P. Ressel, A. Müller, M. Maiwald, G. Tränkle
Published in:
Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVIPhotonics West, San Francisco, USA, Jan 28 - Feb 02, 101230T, doi:10.1117/12.2248621 (2017).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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