LayTec's EpiCurve TT used for strain engineering of GaAs-based laser structures

(...) In order to reduce the wafer bow at room temperature, Dr Andre Maaßdorf and his team at Ferdinand-Braun-Institut (FBH) in Berlin, Germany, have developed a special scheme for strain engineering: they add phosphorus (P) and replace Al0.85GaAs by Al_0.85GaAs_0.96P in a distributed manner.
mehr... (in Englisch)

Quelle: Semiconductor Today, 19.12.2013 (in Englisch)