LayTec metrology speeds up process development on 100mm semi-polar (11-22) GaN on r-plane PSS
At the 17th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) in BigSky, Montana, USA (2-7 August), Dr Frank Brunner of FBH (Ferdinand-Braun-Institut für Höchstfrequenztechnik) of Berlin, Germany presented his latest results on the growth of semi-polar (11-22)-oriented gallium nitride (GaN) on r-plane patterned sapphire substrate (r-PSS) in an Aixtron AIX 2600G3-HT metal-organic chemical vapour deposition (MOCVD) reactor (in 8x4"-wafer confiuration).
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