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  4. FBH reports gallium oxide powe ...

FBH reports gallium oxide power transistors with record values

Quelle: www.greencarcongress.com 29.08.2019 (in Englisch)

The Ferdinand-Braun-Institut (FBH) has achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity.
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