Better electron blocking boosts UV efficiency

A team of scientists from Germany have improved ultraviolet LED efficiency by introducing superior electron-blocking structures into the devices. By replacing the conventional Al_0.7Ga_0.3N electron-blocking layer with the pairing of an Aln layer with a thickness greater than 3 nm and an Al_0.7Ga_0.3N layer, the team has increased the efficiency of its 290 nm LEDs by a factor in excess of eight.
mehr... (nur in Englisch, pdf S. 59)

Quelle: Compound Semiconductor, August/September 2013 (in Englisch), S. 59