S.A. Chevtchenko , S. Freyer, L. Weixelbaum, P. Kurpas, and J. Würfl

Published in:

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2014), Denver, USA, May 19-22, pp. 131-134 (2014).

Abstract:

This contribution deals with the metal-insulator-metal (MIM) capacitor yield improvement in a GaN-based MMICs fabrication process. High MIM capacitor yield is one of the prerequisites for the fabrication of reliable and cost efficient GaN MMICs. In this work, technological factors influencing capacitor yield were identified and analyzed. The analysis was focused on the quality of the bottom capacitor electrode. Based on the analysis, a modification to the fabrication process has been proposed and tested. As a result of the process optimization, 94 % yield of 160×250 µm² MIM capacitors was achieved with a breakdown field strength of 5×10⁸ V/m. The proposed modification to the process does not require additional technological steps, which is a great advantage of our approach.

Keywords:

MIM capacitor, MMIC, yield, AlGaN/GaN HFET, HEMT

Copyright 2014 CSManTech All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from CSManTech.

Full version in pdf-format.