Wideband 80 W Balanced Power Amplifier for ISM and LTE-Bands
S. Paul, S. Preis, W. Heinrich, and O. Bengtsson
Published in:
10th German Microwave Conference (GeMiC 2016), Bochum, Germany, Mar. 14-16, ISBN 978-3-9812668-7-0, pp. 437-440 (2016).
Abstract:
An 80 W balanced GaN-HEMT power amplifier for 2.45-2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis shows that a balanced amplifier is favorable because it simplifies measures to ensure electrical stability and allows better heat sinking.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
GaN-HEMTs; power amplifiers; branch-line couplers.
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