Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW
B. Sumpf, J. Fricke, M. Maiwald, A. Müller, P. Ressel, F. Bugge, G. Erbert and G. Tränkle
Published in:
Semicond. Sci. Technol., vol. 29, no. 045025 (2014).
Abstract:
Wavelength stabilized distributed Bragg reflector (DBR) diode lasers at an emission wavelength of 785 nm will be presented. The devices have a 14 nm thick GaAsP single quantum well as active layer, which is embedded in Al0.65Ga0.35As waveguide layers and Al0.7Ga0.3As cladding layers. The DBR structures are realized as deeply etched tenth order gratings using I-line wafer stepper lithography. The devices have a stripe width of 2.2 µm and a cavity length of 3 mm including a DBR grating with a length of 500 µm. The devices are mounted p-side up on C-mounts. At a temperature of 25 °C a continuous wave output power of 215 mW and a conversion efficiency of 28% are measured. Up to 140 mW single mode operation with a small tuning range below 190 pm is observed. At 50 mW an aging test was performed showing reliable operation over 1000 h.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Keywords:
diode lasers, DBR lasers, Raman spectroscopy, SERDS
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