Two-Stage Harmonically Tuned 50W GaN-HEMT Wideband Power Amplifier
C.T. Nghe1, G. Zimmer3, G. Boeck1,2
Published in:
Proc. 46th European Microwave Conf. (EuMC 2016), London, UK, Oct. 4-6, pp. 576-579 (2016).
Abstract:
In conjunction with suited terminations of harmonic load impedances, this paper contributes a systematic analysis and design for a high power, high efficiency and broadband GaN-HEMT power amplifier (PA). In terms of improving the previous design in [1], this study is illustrated and characterized throughout a practical design of the two-stage PA under consideration of harmonic load terminations. During the design process, matching networks (MNs) at input, output and between the two stages are maintained. The experimental results of large-signal continuous wave (CW) indicate a performance of 47 - 48.5dBm output power with corresponded power gain level of 28.3 dB from 2.0 to 2.8 GHz. The Power-Added-Efficiency (PAE) of the PA is attained from 50 - 65 %.
1 Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
3 Frankfurt University of Applied Sciences, Frankfurt am Main, Germany
Keywords:
GaN-HEMT, harmonic tuning, high efficiency, high power, two-stage power amplifier, wideband.
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