Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
M. Meneghini1, D. Bisi1, I. Rossetto1, C. De Santi1, A. Stocco1, O. Hilt2, E. Bahat-Treidel2, J. Wuerfl2, F. Rampazzo1, G. Meneghesso1, and E. Zanoni1
Published in:
Proc. SPIE 9363, Photonics West, San Francisco, USA, Feb. 07-12, 936314 (2015).
Abstract:
This paper reviews our recent results on the impact of iron and carbon compensation on the dynamic performance of GaN-HEMTs; based on pulsed and transient characterization, we demonstrate that: (i) the use of Fe-doping may lead to a significant current collapse, due to the presence of a trap with activation energy Ea=0.6eV. We discuss the properties of this trap and its physical origin; (ii) high C-doping levels may favor dynamic Ron increase, due to the presence of a trap level located at Ev+0.84 eV. The effect of this trap can be significantly reduced through the use of a double heterostructure.
1 University of Padova, Department of Information Enginnering, Via Gradenigo 6/B 35131 Padova, Italy
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
GaN, HEMT, trapping, defects, doping.
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