Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits
I. Ostermaya , A. Thiesa, T. Kraemera, W. Johna, N. Weimanna, F.-J. Schmücklea, S. Sinhaa, V. Krozera, W. Heinricha, M. Liskerb, B. Tillackb, O. Krügera
Published in:
Microelectron. Eng., vol. 125, pp. 38-44 (2014).
Abstract:
In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies we have employed three-dimensional (3D) Benzocyclobutene (BCB)-based wafer bonding integration scheme. A monolithic wafer fabrication process based on transfer-substrate technology was developed, enabling the realization of complex hetero-integrated high-frequency circuits. Miniaturized vertical interconnects (vias) with low insertion loss and excellent broadband properties enable seamless transition between the InP and BiCMOS sub-circuits.
a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
b IHP Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Keywords:
Heterojunction bipolar transistors, Indium phosphide, Monolithic integrated circuits, Three-dimensional integrated circuits, Wafer bonding, Wafer scale integration
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