Study of lateral brightness in 20 µm to 50 µm wide narrow stripe broad area lasers
J. Decker, M. Winterfeldt, J. Fricke, A. Maaßdorf, P. Crump
Published in:
Proc. of 2015 High Power Diode Lasers and Systems Conference (HPD) and Photonex 2015, Coventry, UK, Oct.14-15, ISBN 978-1-4673-9177-1, pp. 21-22 (2015).
Abstract:
We present a design study of high power narrow stripe broad area diode lasers at 9xx-nm with contact stripe widths of 20 µm, 30 µm an 50 µm. The devices are deeply implanted with helium (He+) at the edges of the electrical contact, to reduce lateral current spreading and lateral carrier accumulation. All devices operate with a lateral beam parameter product (BPP) below 2 mm×mrad, but differ strongly in linear brightness and maximal output power. The linear brightness can reach up to 5.6 W/mm×mrad from a 20 µm wide stripe at an optical output power of 4 W. However, at higher output power the beam quality degrades strongly for 20 µm wide stripes, making stripe width of 30 µm or 50 µm more beneficial for high brightness at P ≥ 5 W.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index terms:
narrow stripe, Broad area laser, brightness, deep implantation, current spreading, carrier accumulation.
© Copyright 2015 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.