Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
D.Nd. Fayea, M. Fialhoa, S. Magalhãesa, E. Alvesa, N.B. Sedrineb, J. Rodriguesb, M.R. Correiab, T. Monteirob, M. Boćkowskic, V. Hoffmannd, M. Weyersd, K. Lorenza
Published in:
Nucl. Instrum. Methods Phys. Res., Sect. B, vol. 379, pp. 251-254 (2016).
Abstract:
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p-n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.
a IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal
b Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
c Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
d Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
III nitrides, Rare earth, Europium, Implantation, LED.
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