Simulation and experiment results of high power DFB diode laser linewidth power product at 780 nm
T-P. Nguyen1,2, H. Wenzel1, A. Wicht1, T.Q. Tien1,3, G. Tränkle1
Published in:
Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2017), Munich, Germany, Jun. 25-29, ISBN: 978-1-5090-6736-7, cb-p.15 (2017).
Abstract:
Simulation and experimental investigation of the linewidth-power product of high power distributed feedback (DFB) diode lasers are presented. The reduction of linewidth-power product to 4.4 MHz.mW was observed for 780 nm DFB lasers.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2 School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
3 Institute of Materials Science, Vietnam Academy of Science and Technology,18 Hoang Quoc Viet, CauGiay, Hanoi, Vietnam
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