Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations
P. Ressel1, M.H. Park2, L.C. Wang2, E. Kuphal3
Published in:
Electron. Lett., vol. 32, no. 18, pp. 1734-1735 (1996).
Abstract:
Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 × 1018cm3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3-7 × 10-7Ωcm2. These Au free metallisations exhibit superior surface and interface morphology, with reaction depths well below 50 nm.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
2 Texas A&M University, College Station, USA
3 TZ, Deutsch Telekom AG, Darmstadt, Germany
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