Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
P. Luo1,2, O. Bengtsson1 and M. Rudolph1,2
Published in:
10th German Microwave Conference (GeMiC 2016), Bochum, Germany, Mar. 14-16, ISBN 978-3-9812668-7-0, pp. 441-444 (2016).
Abstract:
GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of a standard Chalmers (Angelov) model to accurately predict the power amplifier operation of GaN HEMTs. It is shown that relying on pulsed S-parameters and by restricting the model to be valid only for a fixed drain voltage, good simulation accuracy is achieved.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2 Brandenburg University of Technology, Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
Index Terms:
GaN HEMT modeling; Chalmers model; pulsed S-parameter measurements.
© Copyright 2016 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.