O. Krüger, J.-H. Kang, M. Spevak, U. Zeimer, S. Einfeldt

Published in:

Appl. Phys. A, online first (2016).

Abstract:

Laser scribing with a nanosecond-pulsed UV laser operating at 355 nm was used to create precise perforation for die separation of GaN-based laser diodes. Machining depth of single- and multiple-pass scribing was investigated. For pulse energies between 1 and 45 µJ at a pulse repetition frequency of 20 kHz and single scan at 100 mm/min, scribe depths from 15 to 180 µm were obtained. Processing parameters were adjusted to minimize the formation of microcracks due to laser-induced local heating. By using the laser skip-and-scribe technique, the propagation of the cleavage plane could be controlled, irregular breaking could be minimized, and die yield could be improved. Smooth mirror facets with low density of terraces were formed by cleaving. In the vicinity of the laser-treated zone, no detrimental effects on the crystal quality of the multi-quantum wells could be detected by cathodoluminescence. The electro-optical characteristics of broad-area laser diodes fabricated by the laser-assisted process were similar to the ones fabricated using the conventional diamond-tip edge-scribing technique that suffers from low die yield. Our results demonstrate that nanosecond- pulsed UV laser scribing followed by cleaving is a powerful technique for the formation of mirror facets of GaN-based laser diodes.

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