Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
Mhd.T. Arnous1,2, Z. Zhang1, F. Rautschke1 and G. Boeck1,3
Published in:
Int. J. Microwave Wireless Technolog., vol. 9, no. 6, pp. 1261-1269 (2017).
Abstract:
In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4-4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6-2.6 GHz.
1 Microwave Engineering Laboratory, Berlin Institute of Technology, 10587 Berlin, Germany
2 EPCOS AG, A TDK Group Company, 81671 Munich, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut fuer Hochfrequenztechnik, 12489 Berlin, Germany
Copyright © Cambridge University Press and the European Microwave Association 2017. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Cambridge University Press and the European Microwave Association.
Full version in pdf-format.