F. Bugge, P. Crump, C. Frevert, S. Knigge, H. Wenzel, G. Erbert, M. Weyers

Published in:

J. Cryst. Growth, vol. 452, pp. 258-262 (2016).

Abstract:

Laser structures for different operating temperatures were developed. Higher temperatures need an increase in barrier height to reduce carrier leakage. Best results for an emission wavelength of ≈800 nm were obtained using an asymmetric structure containing an n-InGaP and a p-Al_0.5Ga_0.5As waveguide. Such structures show 10 W output power for a single laser diode and >100 W for a laser bar at 50°C ambient temperature and also a good aging behavior.
Lower operating temperatures permit lower barrier heights which results in a lower series resistance and therefore higher conversion efficiency at high power. Carrier concentration and mobility for different Al_xGa_1-xAs compositions were estimated in dependence on temperature. An optimized structure reached 20 W for a single laser diode and 2 kW for a laser bar in QCW mode at -70°C.

Keywords:

A1.Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes.

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