F. Bugge, U. Zeimer, M. Sato, M. Weyers, G. Tränkle

Published in:

J. Cryst. Growth, vol. 183, no. 4, pp. 511-518 (1998).

Abstract:

The indium incorporation into strained InGaAs quantum wells grown on GaAs substrate by metalorganic vapourphase epitaxy is found to be reduced in comparison to relaxed layers. Additionally, the indium uptake into strained QWs is limited to approximately 30% InAs at 650°C. Excessive trimethyl indium supply in the vapour phase leads to a drop of the In-content of the QW and to a reduced total In-content in the whole structure. Only a small amount of the excess indium is incorporated into InAs-rich clusters observed as dark-spot defects and into a graded interfacial layer. A model for this behaviour based on the enhanced In-reevaporation from In-rich areas is presented.

Keywords:

MOVPE, Strained quantum wells, InGaAs laser diodes

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