Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ = 1020 nm) ridge waveguide laser diodes
G. Beister, F. Bugge, G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies, and H. Wenzel
Published in:
Electron. Lett., vol. 34, no. 8, pp. 778–779 (1998).
Abstract:
3.35 mm long InGAs/GaAs/AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with ZnSe/Al2O3, remarkable facet stability was obtained, confirmed during aging at 40°C and 300 mW emission power, or at 70°C and 250 mW.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany
Keywords:
laser stability; waveguide lasers; gallium arsenide; life testing; laser reliability; laser modes; III-V semiconductors; ageing; aluminium compounds; quantum well lasers; indium compounds; semiconductor device testing
Copyright © 1998 IEE
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