Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
M. Senoner1, A. Maaßdorf2, H. Rooch1, W. Österle1, M. Malcher3, M. Schmidt3, F. Kollmer4, D. Paul5, V.-D. Hodoroaba1, S. Rades1, W.E.S. Unger1
Published in:
Anal. Bioanal. Chem., vol. 407, no. 11, pp. 3211-3217 (2015).
Abstract:
The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1-xAs and InxGa1-xAs on a GaAs substrate. The surface of BAM-L200 provides a flat pattern with stripe widths ranging down to 1 nm. Calibration distances, grating periods and stripe widths have been certified by TEM with traceability to the length unit. The combination of gratings, isolated narrow stripes and sharp edges of wide stripes offers plenty of options for the determination of lateral resolution, sharpness and calibration of length scale at selected settings of imaging surfaceanalytical instruments. The feasibility of the reference material for an analysis of the lateral resolution is demonstrated in detail by evaluation of ToF-SIMS, AES and EDX images.
1 BAM Bundesanstalt für Materialforschung und -prüfung, 12200 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 Fachgebiet Mikro- und Feingeräte, Institut für Werkzeugmaschinen und Fabrikbetrieb, Technische Universität Berlin, 10587 Berlin, Germany
4 ION-TOF GmbH, 48149 Münster, Germany
5 Physical Electronics Inc., Chanhassen, MN 55317, USA
Keywords:
AES, BAM-L200, CRM, EDX, Imaging, Lateral resolution, Sharpness, Standardisation, STXM, ToF-SIMS, XPEEM, XPS.
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