Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
A. Lobanova1, E. Yakovlev1, J. Jeschke2, A. Knauer2, and M. Weyers2
Published in:
Jpn. J. Appl. Phys., vol. 55, no. 5S, 05FD07 (2016).
Abstract:
AlxGa1-xN layers with high aluminum content of x ∼ 0.68-0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal-organic vapor phase epitaxy. Growth trends are analyzed by reaction-transport modeling in a wide range of growth conditions. Gas-phase nucleation resulting in both Al and Ga consumption into nanoparticles is a major mechanism affecting the growth efficiencies of AlN and GaN. Process windows suitable to grow multiple quantum wells (MQWs) for deep UV applications are found for a range of pressures, temperatures, and V/III ratios.
1 STR Group--Soft-Impact Ltd., 194156 St. Petersburg, Russia
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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