Improved efficiency and beam divergence in kW-class diode laser bars with edge-heaters
M.J. Miah1,2, A. Boni2, D. Martin2, A. Ginolas2, M. Elattar2, P. Della Casa2, S. Grützner3, S. Strohmaier3, A. Knigge2, G. Tränkle2, and P. Crump2
Published in:
IEEE Photonics Conference (IPC 2024), Rome, Italy, Nov. 10-14, ISBN 79-8-3503-6195-7, MC1.2 (2024).
Abstract:
We present a novel approach to flattening the in-chip thermal profile that develops within multiple-emitter, 1-cm-wide bars by optimally manipulating heating at the edge-emitters. The best-designed bars yield >10% reduced divergence (95% power) and a 5%-point efficiency gain at 0.8 kW compared to reference bars.
1 Institute of Information and Communication Technology, Bangladesh University of Engineering and Technology, ECE Building, 1205, Dhaka, Bangladesh
2 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
3 TRUMPF Laser GmbH, 78713 Schramberg, Germany
Keywords:
Semiconductor laser, laser bar, kW-class laser bar, high-power laser, narrow beam divergence, beam quality
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